Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As
- 23 May 2001
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 10 (1-3) , 175-180
- https://doi.org/10.1016/s1386-9477(01)00077-7
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Spin-flip Raman scattering in Mn-doped GaAs: exchange interaction and g factor renormalizationSolid State Communications, 2000
- Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclustersApplied Physics Letters, 2000
- Model for the Mn acceptor in GaAsSolid State Communications, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorPhysical Review B, 1997
- The s,p-d exchange interaction in GaAs heavily doped with MnSolid State Communications, 1996
- Temperature Dependence of the Electron LandéFactor in GaAsPhysical Review Letters, 1995
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989
- Diluted magnetic semiconductorsJournal of Applied Physics, 1988
- Optical Properties of (Zn, Mn) and (Cd, Mn) Chalcogenide Mixed Crystals and SuperlatticesPhysica Status Solidi (b), 1988