Pixelless infrared imaging utilizing a p-type quantum well infrared photodetector integrated with a light emitting diode
- 26 May 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (21) , 2784-2786
- https://doi.org/10.1063/1.119058
Abstract
We present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelength p-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed.Keywords
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