Integrated quantum well intersub-band photodetectorandlight emitting diode
- 11 May 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (10) , 832-833
- https://doi.org/10.1049/el:19950522
Abstract
The authors propose and demonstrate the integration of a quantum well intersub-band photodetector (QWIP) and a light emitting diode (LED) for making large two-dimensional focal plane arrays for thermal imaging applications. The newly developed QWIP technology is combined with the well established LED technology both based on GaAs and related epitaxially grown alloys, such as AlGaAs and InGaAs.Keywords
This publication has 5 references indexed in Scilit:
- Quantum-well infrared photodetectorsJournal of Applied Physics, 1993
- Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectorsApplied Physics Letters, 1993
- Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructuresApplied Physics Letters, 1993
- Near-unity quantum efficiency of AlGaAs/GaAs quantum well infrared detectors using a waveguide with a doubly periodic grating couplerApplied Physics Letters, 1991
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987