Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors
- 9 August 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (6) , 761-763
- https://doi.org/10.1063/1.109900
Abstract
Dopant segregation in the well region of a multiple quantum well intersubband photodetector can cause an asymmetry in the observed forward and reverse current‐voltage characteristics. We compensate for the segregation by shifting the position of the Si δ doping in the well and model the effect with good agreement for a range of shift values. For samples grown at a substrate temperature of 605 °C, we find that the observed behavior is best described by assuming that the Si δ‐doping profile smears in the growth direction resulting in an asymmetric broadening of about 27 Å.Keywords
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