High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (4) , 519-521
- https://doi.org/10.1109/68.992597
Abstract
We report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90% reflecting surface. The resonant-cavity-enhanced Si photodetectors have 40% quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications.Keywords
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