Strain-induced growth-mode transition of V in epitaxial Mo/V(001) superlattices
- 15 March 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (12) , 8114-8123
- https://doi.org/10.1103/physrevb.53.8114
Abstract
Epitaxial (001) oriented Mo/V superlattices have been grown on MgO (001) substrates kept at 700 °C by magnetron sputter deposition. Films with different modulation periods Λ and with different fractions, , of V in the period were investigated (=/Λ, where is the V-layer thickness). The Λ range was 0.313 to 17.7 nm and was varied in the range 0.11 to 0.93. The as-deposited films were characterized by cross-sectional transmission-electron microscopy and by x-ray-diffraction techniques. The results show that the superlattices change from a structure with smooth Mo and V layers with sharp and well-defined layer interfaces to a structure where the V layers have a large in-plane thickness fluctuation when the V layers exceed a critical thickness . increases from ∼0.3 to ∼8 nm as is increased from 0.11 to 0.83 and for equally thick Mo and V layers is ∼2.5 nm. The layer thickness fluctuations are nonaccumulative and disappear if the periodicity of a growing Mo/V superlattice is changed so that the V-layer thickness becomes smaller than . Mo was found to grow in a two-dimensional mode producing layers with uniform thicknesses, following the undulated surface of the V layers. The results are explained in terms of growth above and below the roughening temperatures for V and Mo, respectively. The roughening of V is suggested to be triggered by the surface strain and curvature induced by misfit dislocations. © 1996 The American Physical Society.
Keywords
This publication has 32 references indexed in Scilit:
- Kinetically controlled critical thickness for coherent islanding and thick highly strained pseudomorphic films of As on GaAs(100)Physical Review B, 1992
- Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Misfit dislocations in lattice-mismatched epitaxial filmsCritical Reviews in Solid State and Materials Sciences, 1992
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Novel strain-induced defect in thin molecular-beam epitaxy layersPhysical Review Letters, 1989
- Thin film growth modes, wetting and cluster nucleationSurface Science, 1988
- Morphological Transitions in Solid Expitaxial OverlayersEurophysics Letters, 1987
- Structural energetics of thin coherently strained metallic overlayersSurface Science, 1987
- Nucleation and growth of thin filmsReports on Progress in Physics, 1984
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975