Misfit dislocations in lattice-mismatched epitaxial films
- 1 January 1992
- journal article
- research article
- Published by Taylor & Francis in Critical Reviews in Solid State and Materials Sciences
- Vol. 17 (6) , 507-546
- https://doi.org/10.1080/10408439208244585
Abstract
This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail. In addition, there is a brief review of the principal properties of dislocations in bulk semiconductors and an outline of existing models for strained layer stability.Keywords
This publication has 118 references indexed in Scilit:
- A new type of misfit dislocation multiplication process in InxGa1−xAs/GaAs strained-layer superlatticesPhilosophical Magazine Letters, 1991
- Line tension of extended double kinks in thin filmsJournal of Applied Physics, 1990
- Rapid variation in epilayer threading dislocation density near x = 0·4 in GexSi1−xon (100) SiPhilosophical Magazine Letters, 1990
- The energy of an array of dislocations: Implications for strain relaxation in semiconductor heterostructuresPhilosophical Magazine A, 1990
- Atomic structure of dislocations in silicon, germanium and diamondPhilosophical Magazine A, 1990
- Strain relaxation phenomena in GexSi1−x/Si strained structuresThin Solid Films, 1989
- Surface stress effects on the critical film thickness for epitaxyApplied Physics Letters, 1989
- Nucleation of misfit dislocations in strained-layer epitaxy in the GexSi1−x/Si systemJournal of Vacuum Science & Technology A, 1989
- Dislocation nucleation near the critical thickness in GeSi/Si strained layersPhilosophical Magazine A, 1989
- Continuous distributions of dislocations: a new application of the methods of non-Riemannian geometryProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1955