Strain relaxation phenomena in GexSi1−x/Si strained structures
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 117-132
- https://doi.org/10.1016/0040-6090(89)90437-9
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Stress dependence of dislocation glide activation energy in single-crystal silicon-germanium alloys up to 2.6 GPaPhysical Review B, 1988
- Erratum: Relaxation of strained-layer semiconductor structures via plastic flow [Appl. Phys. Lett. 5 1, 1325 (1987)]Applied Physics Letters, 1988
- Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxyApplied Physics Letters, 1988
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Thermal relaxation of metastable strained-layer/Si epitaxyPhysical Review B, 1985
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975