Line tension of extended double kinks in thin films
- 15 November 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (10) , 5109-5114
- https://doi.org/10.1063/1.347048
Abstract
We derive an expression for the dislocation line tension in thin-film structures for double-kink (dislocation dipole) extension of a threading dislocation. From these calculations, we conclude, that for a double kink that is a distance of more than three times the vertical dipole separation from the free surface, the effect of the free surface on the double-kink line tension is insignificant. We consider the specific case of a double-kink bounding a 60-nm-thick Si0.7Ge0.3 strained layer grown on a silicon substrate and buried under a silicon cap. For this specific configuration, line tension is seen to increase with cap thickness (which is equivalent to distance of the double kink from the surface) only up to a cap thickness of 100 nm.This publication has 11 references indexed in Scilit:
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