Stability of strained quantum-well field-effect transistor structures
- 1 December 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (12) , 621-623
- https://doi.org/10.1109/55.20415
Abstract
Conditions for stability of strained-layer structures and their implications for device fabrication are examined. Structures which have exhibited the best performance to date are found to be thermodynamically metastable (or at best marginally stable) structures, which will restrict the processing steps permissible in the integration of these devices to form complex circuits.Keywords
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