A new type of misfit dislocation multiplication process in InxGa1−xAs/GaAs strained-layer superlattices
- 1 January 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 63 (1) , 23-29
- https://doi.org/10.1080/09500839108206597
Abstract
A new misfit dislocation multiplication process has been observed for the first time in InxGa1−xAs/GaAs strained-layer superlattices (with x<0.20). Transmission electron microscopy reveals that this process is based on the occurrence of interactions between perpendicular 60° misfit dislocations with identical Burgers vectors and cross-slip events on the resulting dislocation configurations. The last stage of the process involves the operation of Frank-Read sources that emit glissile dislocations into the {111} planes; parts of the half-loops which develop towards the superlattice are parallel to the interface and are then new misfit dislocations.Keywords
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