Misfit dislocations in In0.15Ga0.85As/GaAs strained-layer superlattices
- 13 March 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (11) , 1004-1006
- https://doi.org/10.1063/1.100780
Abstract
The misfit dislocation structure in In0.15Ga0.85As/GaAs strained‐layer superlattices has been characterized by transmission electron microscopy. Most of the dislocations are 60° dislocations confined to the buffer/strained‐layer superlattice interface. This interface also contains sources that emit glissile dislocations into the {111} planes. These dislocations develop into the buffer layer and the substrate but hardly into the strained‐layer superlattice. The sources are connected to the interactions between misfit dislocations in the buffer/superlattice interface.Keywords
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