Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxy
- 7 September 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (10) , 752-754
- https://doi.org/10.1063/1.98856
Abstract
The critical width Lc for misfit dislocation generation has been determined for molecular beam epitaxy grown strained InxGa1−xAs (0.1<x≤1) quantum wells in a GaAs matrix by means of photoluminescence measurements. For the full alloy region the dependence Lc(x) is in good agreement with the theoretical expression proposed by J. W. Matthews and A. E. Blakeslee [J. Cryst. Growth 2 7, 118 (1974)].Keywords
This publication has 10 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructuresJournal of Applied Physics, 1986
- Low-noise behavior of InGaAs quantum-well-structured modulation-doped FET's from 10-2to 108HzIEEE Transactions on Electron Devices, 1986
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure injection lasersJournal of Applied Physics, 1985
- A new Ga0.47In0.53As field-effect transistor with a lattice-mismatched GaAs gate for high-speed circuitsIEEE Electron Device Letters, 1985
- strained-layer superlattices: A proposal for useful, new electronic materialsPhysical Review B, 1983
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974