Electrostatic engineering of nanotube transistors for improved performance

15 December 2003

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 83 (24) , 5038-5040
https://doi.org/10.1063/1.1632531

Abstract

With decreasing device dimensions, the performance of carbon nanotubefield-effect transistors (CNFETs) is limited by high OFF currents except at low drain voltages. Introducing an asymmetry between source and drain electrostatics can improve the performance, reducing OFF currents and extending the usable range of drain voltage. The improvement is most dramatic for ambipolar Schottky-barrier CNFETs. Moreover, this approach allows a single device to exhibit equally good performance as an n - or p -type transistor, by changing only the sign of the drain voltage. Even for CNFETs having ohmic contacts, an asymmetric design can greatly improve the performance for small-bandgap nanotubes.

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Version 1, 2003-08-26, ArXiv

This publication has 9 references indexed in Scilit:

Drain voltage scaling in carbon nanotube transistors
Applied Physics Letters, 2003
Ballistic carbon nanotube field-effect transistors
Nature, 2003
Lateral Scaling in Carbon-Nanotube Field-Effect Transistors
Physical Review Letters, 2003
Field-Modulated Carrier Transport in Carbon Nanotube Transistors
Physical Review Letters, 2002
Carbon Nanotubes as Schottky Barrier Transistors
Physical Review Letters, 2002
Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes
Physical Review Letters, 2001
Controlled creation of a carbon nanotube diode by a scanned gate
Applied Physics Letters, 2001
Logic Circuits with Carbon Nanotube Transistors
Science, 2001
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
IEEE Electron Device Letters, 2001