Lateral Scaling in Carbon-Nanotube Field-Effect Transistors
- 29 July 2003
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 91 (5) , 058301
- https://doi.org/10.1103/physrevlett.91.058301
Abstract
We have fabricated carbon-nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky-barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting carbon nanotubes over at least a few hundred nanometers, even for relatively small carrier velocities.Keywords
All Related Versions
This publication has 13 references indexed in Scilit:
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gatesNature Materials, 2002
- Field-Modulated Carrier Transport in Carbon Nanotube TransistorsPhysical Review Letters, 2002
- Carbon Nanotubes as Schottky Barrier TransistorsPhysical Review Letters, 2002
- High Performance Electrolyte Gated Carbon Nanotube TransistorsNano Letters, 2002
- High-Mobility Nanotube Transistor MemoryNano Letters, 2002
- Vertical scaling of carbon nanotube field-effect transistors using top gate electrodesApplied Physics Letters, 2002
- Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon NanotubesPhysical Review Letters, 2001
- Logic Circuits with Carbon Nanotube TransistorsScience, 2001
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998
- Room-temperature transistor based on a single carbon nanotubeNature, 1998