Lateral scaling in carbon nanotube field-effect transistors

Preprint

11 June 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0306295

Abstract

We have fabricated carbon nanotube (CN) field-effect transistors with multiple, individually addressable gate segments. The devices exhibit markedly different transistor characteristics when switched using gate segments controlling the device interior versus those near the source and drain. We ascribe this difference to a change from Schottky barrier modulation at the contacts to bulk switching. We also find that the current through the bulk portion is independent of gate length for any gate voltage, offering direct evidence for ballistic transport in semiconducting CNs over at least a few hundred nanometers, even for relatively small carrier velocities.

Keywords

FIELD EFFECT TRANSISTORS
FABRICATED CARBON
CARBON NANOTUBE
LATERAL SCALING
GATE SEGMENTS
TRANSISTORS
SEGMENTS
BULK

All Related Versions

Version 1, 2003-06-11, ArXiv
Published version: Physical Review Letters, 91 (5), 058301.