Regrowth behaviour of Si1−xGex/Si structures formed by Ge+ ion implantation and post amorphisation
- 1 February 1994
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 84 (2) , 222-228
- https://doi.org/10.1016/0168-583x(94)95759-2
Abstract
No abstract availableKeywords
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