Impurity-induced layer disordering of quantum-well heterostructures: discovery and prospects
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 4 (4) , 584-594
- https://doi.org/10.1109/2944.720468
Abstract
No abstract availableThis publication has 62 references indexed in Scilit:
- High-power antiguided laser array fabricated without the need for overgrowthIEEE Photonics Technology Letters, 1998
- Highly reliable 60/spl deg/C 50-mW operation of 650-nm band window-mirror laser diodesIEEE Photonics Technology Letters, 1997
- Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealingJournal of Crystal Growth, 1988
- Coupled stripe AlxGa1−xAs-GaAs quantum well lasers defined by impurity-induced (Si) layer disorderingApplied Physics Letters, 1987
- Stripe-geometry quantum well heterostructure AlxGa1−xAs-GaAs lasers defined by defect diffusionApplied Physics Letters, 1986
- Window-Heat Sink Sandwich for Optical Experiments: Diamond (or Sapphire)-Semiconductor-Indium SandwichReview of Scientific Instruments, 1971
- Optical phase shift measurement (77°K) of carrier decay time in direct GaAsPSolid-State Electronics, 1971
- Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAsJournal of Applied Physics, 1971
- Growth and Dislocation Structure of Single-Crystal Ga (As1−xPx)Journal of Applied Physics, 1965
- VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDEApplied Physics Letters, 1965