Time-dependence of the interface trap build-up in deuterium-annealed oxides after irradiation
- 21 December 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (25) , 3014-3016
- https://doi.org/10.1063/1.108479
Abstract
The rate of interface trap Nit build-up after irradiation has been studied in metal-oxide semiconductor oxides which were annealed in either deuterium or hydrogen. The build-up rate is found to be substantially retarded in the deuterium-annealed oxide. This result demonstrates conclusively that the Nit build-up rate is determined by the rate of H+ (D+) drift through the oxide to the Si-SiO2 interface.Keywords
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