Molecular dynamics and quasidynamic simulations of low-energy particle bombardment effects during vapour-phase crystal growth: 10–50 eV Si and In atoms incident on (2 × 1)-terminated Si(001)
- 1 January 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 272 (2) , 271-288
- https://doi.org/10.1016/0040-6090(95)06953-4
Abstract
No abstract availableKeywords
This publication has 40 references indexed in Scilit:
- A simple model for the formation of compressive stress in thin films by ion bombardmentThin Solid Films, 1993
- Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxyPhysical Review B, 1989
- Diffusion without Vacancies or Interstitials: A New Concerted Exchange MechanismPhysical Review Letters, 1986
- Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniquesApplications of Surface Science, 1985
- Microscopic Theory of Impurity-Defect Reactions and Impurity Diffusion in SiliconPhysical Review Letters, 1985
- Migration of interstitials in siliconPhysical Review B, 1984
- Electronic structure and total-energy migration barriers of silicon self-interstitialsPhysical Review B, 1984
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984
- Low-Energy Ion Scattering from the Si(001) SurfacePhysical Review Letters, 1982
- Computer simulation studies of the liquid stateComputer Physics Communications, 1973