Possible observation of Pb0 and Pb1 centers at irradiated (100)Si/SiO2 interface from electrical measurements
- 23 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (26) , 3416-3418
- https://doi.org/10.1063/1.105693
Abstract
By the use of ac conductance measurements, we have observed two distinct defects with different capture cross sections at the x‐ray irradiated (100)Si/SiO2 interface. The capture cross section for one defect is a strong function of energy, while the other one is basically independent of energy. There is a strong possibility that these two interface defects correspond to the Pb0 and Pb1 centers seen in the electron spin resonance experiments. The fact that we do not observe the same behavior on (111) samples lends support to this hypothesis.Keywords
This publication has 4 references indexed in Scilit:
- Interface trap transformation in radiation or hot-electron damaged MOS structuresSemiconductor Science and Technology, 1989
- MOS interface states: overview and physicochemical perspectiveSemiconductor Science and Technology, 1989
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967