Effect of the Nucleation Layer on Stress during Cantilever Epitaxy of GaN on Si (111)
- 10 December 2002
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 194 (2) , 550-553
- https://doi.org/10.1002/1521-396x(200212)194:2<550::aid-pssa550>3.0.co;2-r
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy maskingApplied Physics Letters, 2002
- Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substratesApplied Physics Letters, 2001
- Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistorsJournal of Applied Physics, 2001
- Low-dislocation-density GaN from a single growth on a textured substrateApplied Physics Letters, 2000
- Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffractionJournal of Crystal Growth, 2000
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909