Local Bonding in A—Sige Alloy Films
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Structural, electrical, and optical properties of a-:H and an inferred electronic band structurePhysical Review B, 1985
- Chemical bonding of hydrogen and oxygen in glow-discharge–deposited thin films ofa-Ge:H anda-Ge:(H,O)Physical Review B, 1985
- Electron-spin-resonance study of boron-doped amorphous: H alloysPhysical Review B, 1984
- Planar magnetron sputtering of a-Si:H and a-Ge:H thin filmsJournal of Vacuum Science & Technology A, 1984
- Topics in applied physics, vol. 56 the physics of hydrogenated amorphous silicon II electronic and vibrational properties springer-Verlag Berlin, Heidelberg, New York, Tokyo 1984 360 Seiten, 203 Abbildungen, 10 Tabellen; Preis: DM 118,–, ISBN 3-540-12808-5Crystal Research and Technology, 1984
- Preparation of photoconductive a-SiGe alloy by glow dischargeJournal of Non-Crystalline Solids, 1983
- Alloying effects on the optical absorption edge of glow-discharge a-Si1-xGex: HSolid State Communications, 1983
- ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge DecompositionJapanese Journal of Applied Physics, 1981
- Preferential Attachment of H in Amorphous Hydrogenated Binary Semiconductors and Consequent Inferior Reduction of Pseudogap State DensityPhysical Review Letters, 1981
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976