A low-distortion 230 W GaAs power FP-HFET operated at 22 V for cellular base station

Publisher Website

11 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.2000.904339

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

A 240 W push-pull GaAs power FET for W-CDMA base stations
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Intermodulation Distortion Analysis of MESFET Amplifiers Using the Volterra Series Representation
IEEE Transactions on Microwave Theory and Techniques, 1980