A 240 W push-pull GaAs power FET for W-CDMA base stations
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3 (0149645X) , 1719-1722
- https://doi.org/10.1109/mwsym.2000.862310
Abstract
A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.Keywords
This publication has 3 references indexed in Scilit:
- A low-distortion and high-efficiency E-mode GaAs power FET based on a new method to improve device linearity focused on g/sub m/ valuePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A compact, high efficiency, 120 Watts GaAs power amplifier module for the 3rd generation cellular base stationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 150 W E-mode GaAs power FET with 35% PAE for W-CDMA base stationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003