A 150 W E-mode GaAs power FET with 35% PAE for W-CDMA base station
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 3, 1087-1090 vol.3
- https://doi.org/10.1109/mwsym.1999.779576
Abstract
A 150 W power FET for W-CDMA base stations has been developed. This FET combines four enhancement-mode (E-mode) 40 W FET chips newly developed and implemented in a package in a push-pull configuration. A saturation power of 51.8 dBm (150 W) and an associated 12 dB linear gain were achieved with this device at 2.2 GHz. A third order intermodulation distortion (IM3) obtained at the average output power of 47 dBm was as small as -36 dBc, providing a power added efficiency (PAE) of 35%.Keywords
This publication has 2 references indexed in Scilit:
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