A bias voltage dependence of trapped hole annealing and its measurement technique (MOS capacitor)
- 1 December 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 38 (6) , 1140-1144
- https://doi.org/10.1109/23.124086
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Modeling the anneal of radiation-induced trapped holes in a varying thermal environmentIEEE Transactions on Nuclear Science, 1990
- The nature of the trapped hole annealing processIEEE Transactions on Nuclear Science, 1989
- Logarithmic detrapping response for holes injected into SiO2 and the influence of thermal activation and electric fieldsJournal of Applied Physics, 1988
- Reversibility of trapped hole annealingIEEE Transactions on Nuclear Science, 1988
- Applied Field and Total Dose Dependence of Trapped Charge Buildup in MOS DevicesIEEE Transactions on Nuclear Science, 1987
- Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured AnnealingIEEE Transactions on Nuclear Science, 1986
- Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS CapacitorsIEEE Transactions on Nuclear Science, 1985
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- MOS Hardening Approaches for Low-Temperature ApplicationsIEEE Transactions on Nuclear Science, 1977
- Initial Recombination of IonsPhysical Review B, 1938