Precision lattice parameter studies of ion-implanted silicon
- 16 May 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 17 (1) , 359-369
- https://doi.org/10.1002/pssa.2210170140
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- X-Ray Double Crystal Diffractometer Investigations of Implanted Silicon: D+ and N+Published by Springer Nature ,1972
- X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion ImplantationPhysica Status Solidi (b), 1969
- X‐Ray Diffraction by a Crystal Containing a Translation FaultPhysica Status Solidi (b), 1969
- X-Ray Stress Topography of Thin Films on Germanium and SiliconJournal of Applied Physics, 1968
- Precision lattice constant determinationActa Crystallographica, 1960