X-Ray Stress Topography of Thin Films on Germanium and Silicon

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Abstract
X‐ray stress topography of thin films deposited on single‐crystal substrates is established. This method permits a nondestructive rapid analysis of the stress environment of film‐crystal interfaces. It is based on dynamical diffraction phenomena that occur at such interfaces. This technique is principally useful for the measurement of the sign of the stress in film and/or substrate. It is used to detect stress buildups and stress reversals connected with processing procedures, in particular, with those of the planar semiconductor device technology. It is also an elegant way to measure the adhesion properties of thin films deposited on single‐crystal slices as large as 2 in. in diameter. Dynamical diffraction phenomena of film‐crystal interfaces are discussed in terms of the Penning and Polder theory and shown to be caused through tie‐point migration. Topographical x‐ray contrast of film‐crystal interfaces is interpreted in terms of Bragg plane curvature. Relations between lattice curvature and film stress are given.