Kinetics of vapour-phase epitaxial growth of GaAs1−P
- 1 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 342-345
- https://doi.org/10.1016/0022-0248(72)90181-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor GrowthJournal of the Electrochemical Society, 1970
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- Compositional Inhomogeneities in GaAs1−xPx Alloy Epitaxial LayersJournal of Applied Physics, 1968
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966