One-dimensional GaAs wires fabricated by focused ion beam implantation
- 16 November 1987
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (20) , 1620-1622
- https://doi.org/10.1063/1.98574
Abstract
We have developed a novel, simple technique for fabrication of one‐dimensional GaAs wires by utilizing only a focused ion beam (FIB) technology. The FIB implantation forms high‐resistive regions which confine an n+ channel into a very narrow conductive wire. The minimum width of the GaAs wire fabricated by the present technology is 20 nm. Magnetoconductance of the wires shows a behavior of one‐dimensional localization and a conductance fluctuation due to a quantum interference effect. This is the first observation of the quantum interference effect in GaAs wires fabricated only by FIB implantation. Measured magnetoconductances are compared with the existing theories.Keywords
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