Growth mechanism of 3C-SiC layers at a low temperature region in low-pressure CVD
- 2 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 607-611
- https://doi.org/10.1016/0022-0248(91)90812-j
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Atomic level control in gas source MBE growth of cubic SiCJournal of Crystal Growth, 1990
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 systemJournal of Crystal Growth, 1978