Heteroepitaxial growth of β-SiC on silicon substrate using SiCl4-C3H8-H2 system
- 1 December 1978
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 45, 138-143
- https://doi.org/10.1016/0022-0248(78)90425-6
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Saturated electron drift velocity in 6H silicon carbideJournal of Applied Physics, 1977
- Optical Properties of β-SiC Crystals Prepared by Chemical Vapor DepositionJapanese Journal of Applied Physics, 1975
- High-field transport in wide-band-gap semiconductorsPhysical Review B, 1975
- Vapor-Phase Deposition of Beta-Silicon Carbide on Silicon SubstratesJournal of the Electrochemical Society, 1973
- Growth, Texture, and Surface Morphology of SiC LayersJournal of the Electrochemical Society, 1971
- β-Silicon Carbide FilmsJournal of the Electrochemical Society, 1969
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal StructureJapanese Journal of Applied Physics, 1966
- The Epitaxial Growth of Silicon CarbideJournal of the Electrochemical Society, 1966
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959
- Preparation of Crystals of Pure Hexagonal SiCJournal of the Electrochemical Society, 1958