Interface roughness of GaAs/AlAs superlattices MBE-grown on vicinal surfaces
- 1 June 1991
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 50 (1-4) , 109-114
- https://doi.org/10.1016/0169-4332(91)90147-c
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Smooth, pseudosmooth, and rough GaAs/AlxGa1−xAs interfaces: Effect of substrate misorientationApplied Physics Letters, 1989
- X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substratesJournal of Crystal Growth, 1989
- Anisotropic surface migration of Ga atoms on GaAs (001)Journal of Crystal Growth, 1989
- Interface roughness of GaAs-AlAs quantum wells grown by molecular-beam epitaxy: Misorientation effectsJournal of Applied Physics, 1988
- X-ray diffraction study of intentionally disordered GaAlAs-GaAs superlatticesJournal of Applied Physics, 1987