Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We combine chemical lattice imaging and digital vector pattern recognition to study quantitatively, kinetic intermixing in GaAs/AlAs multilayers. We thus obtain, with atomic plane resolution and near-atomic sensitivity, composition profiles across each interface of a multilayer stack before and after ion-implantation. Our results show significant intermixing even when only one 320 keV Ga+ ion is implanted at 77 K into each 2000 A2 area of the interface. This corresponds to an incident ion dose of 5×l012/cm2.The intermixing is not uniform along the interface. At each interface, we observe more intensely intermixed regions, whose widths correspond to those created by the damage track of a single implanted ion, as expected from Monte-Carlo simulations. It thus appears that we can directly image intermixing due to single energetic ions implanted into the multilayered GaAs/AlAs structure.Keywords
This publication has 12 references indexed in Scilit:
- Nonlinear diffusion in multilayered semiconductor systemsPhysical Review Letters, 1989
- Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantationApplied Physics Letters, 1989
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989
- Mechanism of Ga Implantation-Induced Intermixing of GaAs-AlGaAs MaterialJapanese Journal of Applied Physics, 1989
- Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300°C by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1988
- Comparative studies of ion-induced mixing of GaAs-AlAs superlatticesApplied Physics Letters, 1988
- Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical propertiesPhysical Review B, 1988
- Three-dimensional distributions of ion range and damage including recoil transportNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlatticesJournal of Applied Physics, 1986