Bistability effect in laser-transistor resonant-tunneling structure
- 30 June 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4) , 1259-1262
- https://doi.org/10.1016/0038-1101(94)90403-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Light-emitting transistor based on real-space transfer: electrical and optical propertiesIEEE Transactions on Electron Devices, 1993
- The bistability effect in a bipolar transistor with resonant-tunnelling collector structureSemiconductor Science and Technology, 1992
- Determination of the switching condition in the quantum-well double-heterostructure optoelectronic switch (DOES)IEEE Transactions on Electron Devices, 1992