The bistability effect in a bipolar transistor with resonant-tunnelling collector structure

This publication has 6 references indexed in Scilit:

• Quantum-switched heterojunction bistable bipolar transistor by chemical beam epitaxy
  Applied Physics Letters, 1990
• Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
  Applied Physics Letters, 1989
• Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic
  IEEE Transactions on Electron Devices, 1989
• Self-consistent particle simulation for (AlGa)As/GaAs HBTs with improved base-collector structures
  IEEE Transactions on Electron Devices, 1989
• A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistors
  IEEE Electron Device Letters, 1986
• High field transport in GaAs, InP and InAs
  Solid-State Electronics, 1984