Quantum-switched heterojunction bistable bipolar transistor by chemical beam epitaxy
- 9 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (2) , 150-152
- https://doi.org/10.1063/1.103968
Abstract
We proposed and demonstrated a novel bistable transistor−the quantum‐switched heterojunction bistable bipolar transistor. The transistor has two current states. With increasing base‐emitter voltage, the collector current is switched from high to low, while the base current is switched from low to high. Bistability is observed for a certain range of base voltage. This device has potential applications in implementing high‐speed single bipolar transistor memories, gain quenching in light‐emitting devices, and optoelectronic switching.Keywords
This publication has 10 references indexed in Scilit:
- High-field transport in an InGaAs-InP superlattice grown by chemical beam epitaxyApplied Physics Letters, 1988
- Negative transconductance resonant tunneling field-effect transistorApplied Physics Letters, 1987
- Resonant-tunnelling hot-electron transistor (RHET) using a GaInAs/(AlGa)InAs heterostructureElectronics Letters, 1987
- Hydrogen neutralization of chalcogen double donors in siliconApplied Physics Letters, 1987
- Observation of intrinsic bistability in resonant tunneling structuresPhysical Review Letters, 1987
- Chemical beam epitaxy of Ga0.47In0.53As/InP quantum wells and heterostructure devicesJournal of Crystal Growth, 1987
- Quantum-well resonant tunneling bipolar transistor operating at room temperatureIEEE Electron Device Letters, 1986
- Resonant tunneling transistors with controllable negative differential resistancesIEEE Electron Device Letters, 1985
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance deviceJournal of Applied Physics, 1985