A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
- 1 November 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (11A) , L853
- https://doi.org/10.1143/jjap.24.l853
Abstract
-A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.Keywords
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