Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A) , L311
- https://doi.org/10.1143/jjap.23.l311
Abstract
The first tunneling hot electron transistor (HET) using semiconductor heterojunctions has been achieved. This device uses GaAs/AlGaAs heterojunctions grown by molecular beam epitaxy and sophisticated process technology. Transfer efficiency for hot electrons through 100 nm thick n-GaAs was measured as 0.28.Keywords
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