Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature
- 1 March 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (5) , 508-510
- https://doi.org/10.1063/1.95574
Abstract
This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs‐AlxGa1−xAs ‐GaAs‐AlxGa1−x As‐GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.Keywords
This publication has 9 references indexed in Scilit:
- Negative differential resistance at 300 K in a superlattice quantum state transfer deviceApplied Physics Letters, 1984
- Inelastic tunneling characteristics of AlAs/GaAs heterojunctionsApplied Physics Letters, 1984
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Multibarrier tunneling in Ga1−xAlxAs/GaAs heterostructuresJournal of Applied Physics, 1983
- Enhanced mobility in inverted Al
x
Ga
1−
x
As/GaAs heterojunctions: binary on top of ternaryElectronics Letters, 1981
- Alloyed ohmic contacts to GaAsJournal of Vacuum Science and Technology, 1981
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Self-Oscillation in a Transmission Line with a Tunnel DiodeProceedings of the IRE, 1961