Novel real-space hot-electron transfer devices
- 1 September 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 4 (9) , 334-336
- https://doi.org/10.1109/edl.1983.25753
Abstract
A new class of devices based on hot-electron transfer between two conducting layers is proposed. The essential feature of these devices is a pronounced negative differential resistance (NDR) in the drain circuit, controlled by gate and substrate voltages. This allows a novel type of bistable logic element, which, although being unipolar, is comparable to the CMOS inverter in that a significant current is drawn only during switching. Another possible application is a gate-controlled microwave generator and amplifier. In the present work, the above device concepts are analyzed in the instance of GaAs/ GaAlAs heterojunction realizations.Keywords
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