Quantum dot based nanophotonics and nanoelectronics
- 31 January 2008
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 44 (3) , 168-171
- https://doi.org/10.1049/el:20080074
Abstract
Invention of non-disruptive fabrication technologies for semiconductor quantum dots presented a dream for generations of semiconductor device engineers. Today such technologies exist. A wealth of completely novel devices and such with dramatically improved properties based either on a single/few or a large density of quantum dots appears. Among them are single q-bit emitters, nano-flash memories, ultrafast lasers and amplifiers enabling a wealth of advanced systems.Keywords
This publication has 34 references indexed in Scilit:
- Complete ground state gain recovery after ultrashort double pulses in quantum dot based semiconductor optical amplifierApplied Physics Letters, 2007
- Epitaxy of NanostructuresPublished by Springer Nature ,2004
- Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separationIEEE Journal of Quantum Electronics, 2001
- 3.9 W CW power from sub-monolayer quantum dot diodelaserElectronics Letters, 1999
- Spontaneous ordering of nanostructures on crystal surfacesReviews of Modern Physics, 1999
- Self-organization processes in MBE-grown quantum dot structuresThin Solid Films, 1995
- Lasing action of Ga 0.67 In 0.33 As/GaInAsP/InPtensile-strained quantum-box laserElectronics Letters, 1994
- Intrinsic mechanism for the poor luminescence properties of quantum-box systemsPhysical Review B, 1991
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986
- Multidimensional quantum well laser and temperature dependence of its threshold currentApplied Physics Letters, 1982