3.9 W CW power from sub-monolayer quantum dot diodelaser
- 14 October 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (21) , 1845-1847
- https://doi.org/10.1049/el:19991264
Abstract
Diode lasers emitting at 947 nm with sub-monolayer deposited InAs/GaAs quantum dots in the active region have been fabricated. The 3.9 W output power limited by catastrophic optical damage and the peak conversion efficiency of 50.5% were achieved at 10°C in 100 µm wide stripes with uncoated facets.Keywords
This publication has 6 references indexed in Scilit:
- 3.5 W CW operation of quantum dot laserElectronics Letters, 1999
- Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlatticesApplied Physics Letters, 1999
- Gain characteristics of quantum dot injection lasersSemiconductor Science and Technology, 1999
- High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasersApplied Physics Letters, 1998
- 9.3 W CW (In)AlGaAs 100 µm wide lasers at970 nmElectronics Letters, 1997
- 8 W continuous wave front-facet power from broad-waveguide Al-free 980 nm diode lasersApplied Physics Letters, 1996