Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interface
- 30 September 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 95 (12) , 873-877
- https://doi.org/10.1016/0038-1098(95)00397-5
Abstract
No abstract availableKeywords
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