Surfactant mediated epitaxial growth of InxGa1−xAs on GaAs (001)

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Abstract
It is shown that Te can be used as a surfactant for the growth of highly strained InxGa1−xAs on GaAs(001). As observed by reflection high‐energy electron diffraction analysis during growth, adsorption of Te on the GaAs surface prior to the growth of InxGa1−xAs drastically increases the layer thickness which can be grown in a two‐dimensional layer‐by‐layer fashion. In analogy with the behavior of As and Sb as surfactant in the growth of Si/Ge [Copel, Reuter, Kaxiras, and Tromp, Phys. Rev. Lett. 63, 632 (1989)] Te is only slightly incorporated in the growing layer and floats at the surface.