InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature

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Abstract
The fabrication of long-wavelength optoelectronic devices on GaAs substrates is an attractive method for monolithic integration of optical and electronic devices on a single chip for applications in telecommunications. In this letter we describe our studies of one such scheme using a novel structure for spatially separating a portion of the biaxial compressive stress due to lattice mismatch of the layers from the well layer, and demonstrate its feasibility. High quality pseudomorphic strained InGaAs quantum wells were grown on GaAs substrates by molecular beam epitaxy with a band edge between 1.3 and 1.4 μm at room temperature. Low-temperature photoluminescence spectroscopy as well as polarization-dependent absorption measurements in a waveguide geometry was used to characterize the structures.