Strain induced 2D–3D growth mode transition in molecular beam epitaxy of InxGa1t-xAs on GaAs (001)
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 114 (4) , 693-699
- https://doi.org/10.1016/0022-0248(91)90418-5
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrateApplied Physics Letters, 1991
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the ChannelJapanese Journal of Applied Physics, 1991
- Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxyJournal of Applied Physics, 1990
- InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiencyApplied Physics Letters, 1990
- Lattice-mismatched In0.53Ga0.47As/In0.52Al0.48As modulation-doped field-effect transistors on GaAs: Molecular-beam epitaxial growth and device performanceJournal of Applied Physics, 1990
- A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifierApplied Physics Letters, 1990
- InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperatureApplied Physics Letters, 1989
- Novel pseudomorphic high electron mobility transistor structures with GaAs-In0.3Ga0.7As thin strained superlattice active layersApplied Physics Letters, 1989
- Recent trends in III–V strained layer researchJournal of Vacuum Science & Technology B, 1986
- Properties of InxGa1−xAs-GaAs strained-layer quantum-well-heterostructure injection lasersJournal of Applied Physics, 1985