InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency
- 23 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (4) , 321-323
- https://doi.org/10.1063/1.103678
Abstract
Graded‐index separate‐confinement heterostructure InGaAs/AlGaAs single quantum well diode lasers emitting at 1.02 μm have been fabricated from structures grown by organometallic vapor phase epitaxy. Under pulsed operation, threshold current densities as low as 65 A/cm2, the lowest reported for InGaAs/AsGaAs lasers, have been obtained for a cavity length L of 1500 μm. Differential quantum efficiencies as high as 90% have been obtained for L=300 μm. Output powers as high as 1.6 W per facet and power conversion efficiencies as high as 47% have been obtained for continuous operation of uncoated lasers with L=1000 μm.Keywords
This publication has 14 references indexed in Scilit:
- Pumping wavelength dependence on gain factor of a 0.98 μm pumped Er3+ fiber amplifierApplied Physics Letters, 1989
- Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiencyApplied Physics Letters, 1989
- Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thicknessApplied Physics Letters, 1989
- Large-area uniform OMVPE growth for GaAs/AIGaAs quantum-well diode lasers with controlled emission wavelengthJournal of Electronic Materials, 1989
- Operating characteristics of InGaAs/AlGaAs strained single quantum well lasersApplied Physics Letters, 1989
- Continuous operation of high-power (200 mW) strained-layer Ga 1−x In x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μmElectronics Letters, 1988
- Fast computation of finger-length-weighted SAW transducer dynamic admittanceElectronics Letters, 1988
- Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densitiesApplied Physics Letters, 1987
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Band-structure engineering for low-threshold high-efficiency semiconductor lasersElectronics Letters, 1986