Highly-reliable, low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Tantalum-gate thin-film SOI nMOS and pMOS for low-power applicationsIEEE Transactions on Electron Devices, 1997
- Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin filmsJournal of Vacuum Science & Technology A, 1997
- Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processingIEEE Transactions on Electron Devices, 1997